Abstract: 【Objective】 To explore the effect of exogenous silicon drip application on the growth and physiological characteristics of winter wheat under low light stress. 【Methods】 Pot experiment was conducted in southern Xinjiang from 2018 to 2019, and Xindong 60 was used as the experimental material. From jointing stage to mature stage, the winter wheat was shaded by black shading net at 25%. At the jointing stage of winter wheat, five exogenous silicon (Na₂SiO₃analysis pure) were applied at the drip rates of 7.5 kg/hm² (Si₁), 15 kg/hm² (Si₂), 22.5 kg/hm² (Si₃), 30 kg/hm² (Si₄) and 37.5 kg/hm²(Si₅), respectively. 【Results】 The results showed that under low light stress, exogenous silicon drip application could increase the SPAD value of plant height, stem diameter, ear length and leaves of winter wheat The photosynthetic performance of leaves and the net photosynthetic rate (Pn), transpiration rate (Tr) and stomatal conductance (Gs) of flag leaves were improved. The number of fertile spikelets increased and the number of infertile spikelets decreased. The biomass per stem, grain number per spike and grain weight per spike increased significantly. Each index reached the best in Si₃ treatment. 【Conclusion】 Comprehensive analysis shows that silicon can improve the growth of winter wheat plants under low light stress, improve photosynthesis, and increase the number of fertile spikelets, grains per spike and grain weight per spike. Under the experimental conditions, the best application of exogenous silicon is 22.5 kg/hm², which can provide reference for production.